DISLOCATION BEHAVIOR IN INGAAS STEP-GRADED AND ALTERNATING STEP-GRADED STRUCTURES - DESIGN RULES FOR BUFFER FABRICATION

被引：18
作者：
ARAUJO, D
GONZALEZ, D
GARCIA, R
SACEDON, A
CALLEJA, E
机构：
[1] UNIV CADIZ,IM & QI,E-11510 PUERTO REAL,SPAIN
[2] UNIV POLITECN MADRID,ETSI TELECOMMUN,DEPT INGN ELECTR,E-28040 MADRID,SPAIN
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 24期
关键词：
D O I：
10.1063/1.115341
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A comparison between compositionally stepped and alternating step-graded structures used in the production of a relaxation buffer layer is carried out by means of transmission electron microscopy. The latter shows higher efficiency in relieving the strain. A simple balance force model permits us to understand the reason for a higher generation of threading dislocations observed in the alternating step-graded structures. The presented results can be applied as new design rules for buffer fabrication that contrast in some key points with previous published rules as, for example, the ''zero-net-strain'' precept [D. Dunstan, P. Kidd, P. F. Fewster, N. L. Andrew, L. Gonzalez, Y. Gonzalez, A. Sacedon, and F. Gonzalez-Sanz, Appl. Phys. Lett. 65, 845 (1994)]. (C) 1995 American Institute of Physics.
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收藏
页码：3632 / 3634
页数：3
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