AUGER RECOMBINATION WITH DEEP IMPURITIES IN INDIRECT BAND-GAP SEMICONDUCTORS

被引：21

作者：

HAUG, A ^{[1
]}

机构：

[1] TECH UNIV BERLIN,FACHBEREICH PHYS,D-1000 BERLIN 12,FED REP GER

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1981年 / 108卷 / 02期

关键词：

D O I：

10.1002/pssb.2221080219

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：443 / 448

页数：6

共 20 条

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[9] FORMALISM FOR INDIRECT AUGER EFFECT .1. [J].

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PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES, 1976, 347 (1651) :547-564

[10] BAND-TO-BAND AUGER RECOMBINATION IN INDIRECT GAP SEMICONDUCTORS [J].

HULDT, L .

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