TIN DIOXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION FROM TIN(II) ACETYLACETONATE

被引:15
作者
MARUYAMA, T
IKUTA, Y
机构
[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University, Sakyo-ku, Kyoto, 606, Yoshida-Honmachi
关键词
D O I
10.1016/0927-0248(92)90029-O
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Tin dioxide thin films were prepared by a low-temperature atmospheric-pressure chemical vapor deposition method in air. The raw material was tin(II) acetylacetonate. At a reaction temperature above 230-degrees-C, polycrystalline thin films were obtained with a high deposition rate. When the thickness of film is larger than 1000 nm, the texture coefficients show a dominant [002] orientation, which is independent of both substrate temperature and vapor pressure of source material.
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页码:209 / 215
页数:7
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