TIN OXIDE GAS SENSOR FABRICATED USING CMOS MICRO-HOTPLATES AND INSITU PROCESSING

被引：253

作者：

SUEHLE, JS

CAVICCHI, RE

GAITAN, M

SEMANCIK, S

机构：

[1] National Institute of Standards and Technology, Gaithersburg

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 03期

关键词：

D O I：

10.1109/55.215130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first monolithic tin oxide (SnO2) gas sensor realized by commercial CMOS foundry fabrication (MOSIS) and post-fabrication processing techniques. The device is composed of a sensing film that is sputter-deposited on a silicon micromachined hotplate. The fabrication technique requires no masking and utilizes in-situ process control and monitoring of film resistivity during film growth. Micro-hotplate temperature is controlled from ambient to 500-degrees-C with a thermal efficiency of 8-degrees-C / mW and thermal response time of 0.6 ms. Gas sensor responses of pure SnO2 filMS to H-2 and O2 with an operating temperature of 350-degrees-C are reported. The fabrication methodology allows integration of an array of gas sensors of various films with separate temperature control for each element in the array, and circuits for a low-cost CMOS-based gas sensor system.

引用

页码：118 / 120

页数：3

共 20 条

[1] FABRICATION OF NOVEL 3-DIMENSIONAL MICROSTRUCTURES BY ANISOTROPIC ETCHING OF (100) AND (110) SILICON [J].