共 13 条
[1]
COLLINS AT, 1989, J PHYS CONDENS MATT, V1, P1029
[3]
BOUND EXCITONS AND DONOR-ACCEPTOR PAIRS IN NATURAL AND SYNTHETIC DIAMOND
[J].
PHYSICAL REVIEW,
1965, 139 (2A)
:A588-&
[4]
PROPERTIES OF BORON-DOPED EPITAXIAL DIAMOND FILMS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1990, 29 (05)
:824-827
[6]
KAWARADA H, 1990, MATER RES SOC SYMP P, V162, P195
[7]
AB-INITIO CALCULATION OF ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF DIAMOND USING DISCRETE VARIATIONAL METHOD
[J].
PHYSICAL REVIEW B,
1971, 4 (10)
:3610-&
[8]
ELECTRICAL CHARACTERISTICS OF METAL CONTACTS TO BORON-DOPED DIAMOND EPITAXIAL FILM
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1989, 28 (05)
:758-762
[9]
EPITAXIAL-GROWTH OF HIGH-QUALITY DIAMOND FILM BY THE MICROWAVE PLASMA-ASSISTED CHEMICAL-VAPOR-DEPOSITION METHOD
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1990, 29 (01)
:34-40
[10]
FIELD-EFFECT TRANSISTORS USING BORON-DOPED DIAMOND EPITAXIAL-FILMS
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS,
1989, 28 (12)
:L2153-L2154