Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers

被引：0

作者：

Osinniy, V. ^{[1
]}

Dybko, K. ^{[1
]}

Jedrzejczak, A. ^{[1
]}

Arciszewska, M. ^{[1
]}

Dobrowolski, W. ^{[1
]}

Story, T. ^{[1
]}

Radchenko, M. V. ^{[2
]}

Sichkovskiy, V. I. ^{[2
]}

Lashkarev, G. V. ^{[2
]}

Olsthoorn, S. M. ^{[3
]}

Sadowski, J.

机构：

[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Natl Ukrainian Acad Sci, Inst Problems Mat Sci, UA-03180 Kiev, Ukraine

[3] Univ Nijmegen, Res Inst Mat, High Field Magnet Lab, NL-6525 ED Nijmegen, Netherlands

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2008年 / 11卷 / 03期

基金：

瑞典研究理事会;

关键词：

thermoelectric power; ferromagnetic Ga1-xMnxAs; Curie temperature;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Thermoelectric power, electrical conductivity, and high field Hall effect were studied over a broad temperature range in ferromagnetic Ga1-xMnxAs epitaxial layers (0.015 <= x <= 0.06). Thermoelectric power analysis gives information about carrier transport mechanisms in layers with both metallic and non-metallic types of conductivity and allows determination of the Fermi energy and carrier concentration. At high temperatures (T > 70 K), the thermoelectric power in GaMnAs linearly increases with increasing temperature. That indicates the presence of a degenerate hole gas with the Fermi energy E-F = 220 +/- 25 meV, nearly independent of Mn content (for 0.02 <= x <= 0.05). At lower temperatures, GaMnAs layers with metallic-type conductivity show an additional contribution to the thermoelectric power with the maximum close to the Curie temperature.

引用

页码：257 / 265

页数：9

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