ELECTRICAL-PROPERTIES OF LASER-ANNEALED DONOR-IMPLANTED GAAS

被引：14

作者：

SEALY, BJ

KULAR, SS

STEPHENS, KG

CROFT, R

PALMER, A

机构：

[1] CITY UNIV LONDON,DEPT PHYS,LONDON EC1V 4PB,ENGLAND

[2] CITY UNIV LONDON,DEPT ELECT ENGN,LONDON EC1V 4PB,ENGLAND

来源：

ELECTRONICS LETTERS | 1978年 / 14卷 / 22期

关键词：

D O I：

10.1049/el:19780484

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：720 / 721

页数：2

共 5 条

[1] LASER REORDERING OF IMPLANTED AMORPHOUS LAYERS IN GAAS [J].

CAMPISANO, SU ;

CATALANO, I ;

FOTI, G ;

RIMINI, E ;

EISEN, F ;

NICOLET, MA .

SOLID-STATE ELECTRONICS, 1978, 21 (02) :485-488

[2] ANNEALING OF TE-IMPLANTED GAAS BY RUBY-LASER IRRADIATION [J].

GOLOVCHENKO, JA ;

VENKATESAN, TNC .

APPLIED PHYSICS LETTERS, 1978, 32 (03) :147-149

[3] PULSED LASER ANNEALING OF ZINC IMPLANTED GAAS [J].

KULAR, SS ;

SEALY, BJ ;

STEPHENS, KG ;

CHICK, DR ;

DAVIS, QV ;

EDWARDS, J .

ELECTRONICS LETTERS, 1978, 14 (04) :85-87

[4] LASER-PULSE ENERGY-DEPENDENCE OF ANNEALING IN ION-IMPLANTED SI AND GAAS SEMICONDUCTORS [J].

RIMINI, E ;

BAERI, P ;

FOTI, G .

PHYSICS LETTERS A, 1978, 65 (02) :153-155

[5] RESISTIVITY MOBILITY AND IMPURITY LEVELS IN GAAS GE AND SI AT 300 DEGREES K [J].

SZE, SM ;

IRVIN, JC .

SOLID-STATE ELECTRONICS, 1968, 11 (06) :599-&

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