TEMPERATURE-DEPENDENCE OF INTRA-4F-SHELL PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE SPECTRA FOR ERBIUM-DOPED GAAS

被引:41
作者
TAKAHEI, K
WHITNEY, PS
NAKAGOME, H
UWAI, K
机构
关键词
D O I
10.1063/1.343019
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1257 / 1260
页数:4
相关论文
共 11 条
[1]   EFFECT OF BAKING TEMPERATURE ON PURITY OF LPE GA0.47IN0.53AS [J].
AMANO, T ;
TAKAHEI, K ;
NAGAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :2105-2109
[2]   PHOTOLUMINESCENCE EXCITATION MEASUREMENTS ON GAAS-ER GROWN BY MOLECULAR-BEAM EPITAXY [J].
ENNEN, H ;
WAGNER, J ;
MULLER, HD ;
SMITH, RS .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (10) :4877-4879
[3]   LINEWIDTHS AND THERMAL SHIFTS OF SPECTRAL LINES IN NEODYMIUM-DOPED YTTRIUM ALUMINUM GARNET AND CALCIUM FLUOROPHOSPHATE [J].
KUSHIDA, T .
PHYSICAL REVIEW, 1969, 185 (02) :500-+
[4]   EXTREMELY SHARP ERBIUM-RELATED INTRA-4F-SHELL PHOTOLUMINESCENCE OF ERBIUM-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
NAKAGOME, H ;
UWAI, K ;
TAKAHEI, K .
APPLIED PHYSICS LETTERS, 1988, 53 (18) :1726-1728
[5]   OBSERVATION OF ENHANCED SINGLE LONGITUDINAL MODE-OPERATION IN 1.5-MU-M GAINASP ERBIUM-DOPED SEMICONDUCTOR INJECTION-LASERS [J].
TSANG, WT ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1986, 49 (25) :1686-1688
[6]   ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
UWAI, K ;
NAKAGOME, H ;
TAKAHEI, K .
APPLIED PHYSICS LETTERS, 1987, 51 (13) :1010-1012
[7]  
UWAI K, 1988, IN PRESS 4TH P INT C
[8]   SINGLE LONGITUDINAL MODE-OPERATION OF ER-DOPED 1.5-MU-M INGAASP LASERS [J].
VANDERZIEL, JP ;
OBERG, MG ;
LOGAN, RA .
APPLIED PHYSICS LETTERS, 1987, 50 (19) :1313-1315
[9]  
WHITNEY P, UNPUB
[10]  
WHITNEY P, 1988, 46TH DEV RES C BOULD