STRUCTURE OF LPCVD TUNGSTEN FILMS FOR IC APPLICATIONS

被引：24

作者：

KAMINS, TI

BRADBURY, DR

CASS, TR

LADERMAN, SS

REID, GA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 12期

关键词：

D O I：

10.1149/1.2108470

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：2555 / 2559

页数：5

共 21 条

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[10] DIFFUSION OF IMPURITIES IN POLYCRYSTALLINE SILICON [J].

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