TRAPPING EFFECTS IN AU-N-TYPE GAAS SCHOTTKY BARRIER DIODES

被引：30

作者：

FURUKAWA, Y

ISHIBASHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1967年 / 6卷 / 04期

关键词：

D O I：

10.1143/JJAP.6.503

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：503 / +

页数：1

共 14 条

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