TEM, AES AND XPS STUDIES OF SI LAYER ON BURIED SIO2 LAYER FORMED BY HIGH-DOSE OXYGEN ION-IMPLANTATION

被引：22
作者：
HAYASHI, T
MAEYAMA, S
YOSHII, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 06期
关键词：
D O I：
10.1143/JJAP.19.1111
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1111 / 1116
页数：6
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