CONDUCTIVITY AND HALL EFFECT OF MICRO-CRYSTALLINE SELENIUM CONTAINING IODINE IMPURITIES

被引：22

作者：

PLESSNER, KW

机构：

来源：

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B | 1951年 / 64卷 / 380期

关键词：

D O I：

10.1088/0370-1301/64/8/308

中图分类号：

Q [生物科学];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

引用

页码：681 / 690

页数：10

共 15 条

[1]

BLACKBURN WE, 1948, J APPL PHYS, V19, P50

[2]

BORELIUS G, 1949, ARK FYS, V1, P305

[3]

BORELIUS G, 1946, ARK MAT ASTR FYS A, V33

[4]

DAUBER H, 1946, FIAT706 FIN REP

[5] Hall effect measurement of selenium. [J].

Eckart, F ;

Kittel, A .

HENKELS, HW .

[7] THERMOELECTRIC POWER AND MOBILITY OF CARRIERS IN SELENIUM [J].

HENKELS, HW .

PHYSICAL REVIEW, 1950, 77 (05) :734-736

[8]

HENNINGER FP, 1938, ANN PHYS LPZ, V31, P342

[9] THEORY OF RESISTIVITY AND HALL EFFECT AT VERY LOW TEMPERATURES [J].

HUNG, CS .

PHYSICAL REVIEW, 1950, 79 (04) :727-728

[10] IMPROVED METHOD FOR MEASURING HALL COEFFICIENTS [J].

ISENBERG, I ;

RUSSELL, BR ;

GREENE, RF .