MODIFIED FORWARD IV PLOT FOR SCHOTTKY DIODES WITH HIGH SERIES RESISTANCE

被引：1331

作者：

NORDE, H

机构：

[1] Institute of Technology, University of Uppsala, Uppsala

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 07期

关键词：

D O I：

10.1063/1.325607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that by plotting the function F (V) =V/2-(kT/q) ln(I/AA**T2) a reliable value of the barrier height can be obtained even if there is a series resistance which would hamper the evaluation of the standard lnI-vs-V plot. A theoretical examination of F (V) is followed by experimental plots for some common Schottky-barrier diodes.

引用

页码：5052 / 5053

页数：2