FERMI LEVEL PINNING IN THE MIDDLE OF THE BAND-GAP IN CDTE-CL CRYSTALS - ROLE OF DEEP LOCALIZED STATES

被引：16
作者：
AGRINSKAYA, NV
ARKADEVA, EN
机构：
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1989年 / 283卷 / 02期
关键词：
D O I：
10.1016/0168-9002(89)91367-3
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
引用
收藏
页码：260 / 262
页数：3
相关论文
共 9 条
[1]  
AGRINNSKAYA NV, 1984, FTP, V18, P951
[2]   DETERMINATION AND CHARACTERIZATION OF DEEP LEVELS IN P-CDTE(C1) [J].
HOSCHL, P ;
POLIVKA, P ;
PROSSER, V ;
VANECEK, M ;
SKRIVANKOVA, M .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :229-233
[3]   SELF-COMPENSATION LIMITED CONDUCTIVITY IN BINARY SEMICONDUCTORS .1. THEORY [J].
MANDEL, G .
PHYSICAL REVIEW, 1964, 134 (4A) :1073-+
[4]   EFFECT OF DEEP LEVELS ON SEMICONDUCTOR CARRIER CONCENTRATIONS IN THE CASE OF STRONG COMPENSATION [J].
NEUMARK, GF .
PHYSICAL REVIEW B, 1982, 26 (04) :2250-2252
[5]   ELECTRICAL-PROPERTIES OF CDTE-CL [J].
PETTY, MC ;
DHARMADASA, IM ;
ROBERTS, GG .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1980, 13 (10) :1899-1909
[6]  
ROSE A, 1986, F PHOTOCONDUCTIVITY
[7]   CARRIER TRANSPORT AND TRAPPING PROCESS IN HIGH-RESISTIVITY CDTE GROWN BY A MODIFIED THM [J].
TAGUCHI, T ;
SHIRAFUJI, J ;
INUISHI, Y .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :189-193
[8]   DETAILED CHARACTERIZATION OF DEEP CENTERS IN CDTE - PHOTO-IONIZATION AND THERMAL IONIZATION PROPERTIES [J].
TAKEBE, T ;
SARAIE, J ;
MATSUNAMI, H .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) :457-469
[9]   APPLICATIONS OF CDTE - REVIEW [J].
WALD, FV .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :277-290
1