TUNNELING INTO INTERFACE STATES OF MOS STRUCTURES

被引：20

作者：

DAHLKE, WE

机构：

来源：

关键词：

D O I：

10.1063/1.1754801

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：261 / &

共 6 条

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[2]

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[4] AU-N-TYPE GAAS SCHOTTKY BARRIER + ITS VARACTOR APPLICATION [J].

KAHNG, D .

BELL SYSTEM TECHNICAL JOURNAL, 1964, 43 (1P1) :215-+

[5]

NICOLLIAN EH, TO BE PUBLISHED

[6]

WAXMAN AS, 1966, THESIS PRINCETON U