INTENSE FIELD EFFECTS ON IMPURITIES IN SEMICONDUCTORS

被引：31
作者：
FONSECA, ALA
AMATO, MA
NUNES, OAC
机构：
[1] Physics Department, University of Brasilia
来源：
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1994年 / 186卷 / 02期
关键词：
D O I：
10.1002/pssb.2221860233
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
[No abstract available]
引用
收藏
页码：K57 / K61
页数：5
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