DETAILED PHOTO-LUMINESCENCE INTENSITY AND LINESHAPE STUDIES OF DOPED A-AS2SE3 FILMS

被引：7

作者：

WEINSTEIN, BA

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1980年 / 41卷 / 02期

关键词：

D O I：

10.1080/13642818008245382

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：235 / 244

页数：10

共 26 条

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[7] FULLER CS, 1959, SEMICONDUCTORS, pCH5
[8] CHARGED DEFECT-PAIR LUMINESCENCE IN A-AS2S3
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