PHOTOLUMINESCENCE OF GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY WITH GROWTH INTERRUPTIONS

被引：88

作者：

KOPF, RF

SCHUBERT, EF

HARRIS, TD

BECKER, RS

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 06期

关键词：

D O I：

10.1063/1.104551

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single GaAs/Al(x)Ga(1-x)As quantum wells, grown by molecular beam epitaxy with growth interruptions at each interface, are investigated using low-temperature photoluminescence. The three clearly resolved photoluminescence peaks are attributed to discrete monolayer thicknesses of the well. The splitting of the peaks is investigated for several hundred points across a 2 in. wafer. The negligible variation of the peak splitting is consistent with abrupt interfaces in the growth direction, atomically smooth interfaces, and discrete thicknesses of the quantum well with changes of only integer multiples of monolayers.

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页码：631 / 633

页数：3

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共 11 条

[1] EFFECT OF WELL SIZE FLUCTUATION ON PHOTO-LUMINESCENCE SPECTRUM OF ALAS-GAAS SUPER-LATTICES [J].

GOLDSTEIN, L ;

HORIKOSHI, Y ;

TARUCHA, S ;

OKAMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1489-1492

[2] MOLECULAR-BEAM EPITAXIAL-GROWTH MECHANISMS ON THE GAAS(100) SURFACE [J].

HARBISON, JP ;

FARRELL, HH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :733-735

[3] INTERFACE DISORDER IN GAAS/ALGAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE-TEMPERATURE [J].

HAYAKAWA, T ;

SUYAMA, T ;

TAKAHASHI, K ;

KONDO, M ;

YAMAMOTO, S ;

YANO, S ;

HIJIKATA, T .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :952-954

[4] PHOTOLUMINESCENCE STUDIES OF THE EFFECTS OF INTERRUPTION DURING THE GROWTH OF SINGLE GAAS/AI0.37GA0.63AS QUANTUM-WELLS [J].

MILLER, RC ;

TU, CW ;

SPUTZ, SK ;

KOPF, RF .

APPLIED PHYSICS LETTERS, 1986, 49 (19) :1245-1247

[5] CHEMICAL MAPPING OF SEMICONDUCTOR INTERFACES AT NEAR-ATOMIC RESOLUTION [J].

OURMAZD, A ;

TAYLOR, DW ;

CUNNINGHAM, J .

PHYSICAL REVIEW LETTERS, 1989, 62 (08) :933-936

[6] ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS IN GAAS-ALAS QUANTUM WELL STRUCTURES AND THEIR SUPPRESSION BY INSERTION OF SMOOTHING PERIOD IN MOLECULAR-BEAM EPITAXY [J].

SAKAKI, H ;

TANAKA, M ;

YOSHINO, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (06) :L417-L420

[7] ALLOY BROADENING IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS [J].

SCHUBERT, EF ;

GOBEL, EO ;

HORIKOSHI, Y ;

PLOOG, K ;

QUEISSER, HJ .

PHYSICAL REVIEW B, 1984, 30 (02) :813-820

[8] PROPERTIES OF (AL,GA)AS/GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY WITH GROWTH INTERRUPTION [J].

TU, CW ;

MILLER, RC ;

WILSON, BA ;

PETROFF, PM ;

HARRIS, TD ;

KOPF, RF ;

SPUTZ, SK ;

LAMONT, MG .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :159-163

[9] DOES LUMINESCENCE SHOW SEMICONDUCTOR INTERFACES TO BE ATOMICALLY SMOOTH [J].

WARWICK, CA ;

JAN, WY ;

OURMAZD, A ;

HARRIS, TD .

APPLIED PHYSICS LETTERS, 1990, 56 (26) :2666-2668

[10] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].

WEISBUCH, C ;

DINGLE, R ;

GOSSARD, AC ;

WIEGMANN, W .

SOLID STATE COMMUNICATIONS, 1981, 38 (08) :709-712