SCHOTTKY-BARRIER HEIGHT AND REVERSE CURRENT OF THE N-SI-ELECTROLYTE JUNCTION

We present a new set of results on the current-voltage and capacitance-voltage characteristics of the n-Si-aqueous electrolyte interface. The extreme sensitivity of these characteristics to surface defects has been realized, and defect-free surfaces have been obtained by using a mechanochemical polishing method. A transient technique has allowed us to measure the anodic current density for the oxide-free surface. We have performed these experiments for samples of various donor concentrations and electrolytes of various pH. In each case the flat-band potential and Schottky barrier height have been obtained. The results show that the process for anodic current is thermally activated electron transfer from surface states over the Schottky barrier, and not electron-hole pair generation in the depletion region, as was previously believed. © 1979.