LASER PROCESSING IN THE PREPARATION OF SILICON SOLAR-CELLS

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541

[2] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140

[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[4] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230

[5] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319

[6] BELL RO, 1979, APR P EUR PHOT SOL E, P153

[7] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 10 - +

[8] CAMPISANO SU, 1978, AUG P LAS EFF ION IM, P139

[9] CEMBALI F, 1978, SEP P INT C ION BEAM, P859

[10] FABRE E, 1977, SEP P INT C LUX, P249

[1] CW ARGON-LASER ANNEALING OF ION-IMPLANTED SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (06) : 539 - 541

[2] ARSENIC DIFFUSION IN SILICON MELTED BY HIGH-POWER NANOSECOND LASER PULSING [J]. APPLIED PHYSICS LETTERS, 1978, 33 (02) : 137 - 140

[3] MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) : 788 - 797

[4] EPITAXIAL LASER CRYSTALLIZATION OF THIN-FILM AMORPHOUS SILICON [J]. APPLIED PHYSICS LETTERS, 1978, 33 (03) : 227 - 230

[5] CALCULATED TEMPERATURE DISTRIBUTION DURING LASER ANNEALING IN SILICON AND CADMIUM TELLURIDE [J]. APPLIED PHYSICS, 1979, 19 (03): : 313 - 319

[6] BELL RO, 1979, APR P EUR PHOT SOL E, P153

[7] ION IMPLANTATION AS A PRODUCTION TECHNIQUE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (01) : 10 - +

[8] CAMPISANO SU, 1978, AUG P LAS EFF ION IM, P139

[9] CEMBALI F, 1978, SEP P INT C ION BEAM, P859

[10] FABRE E, 1977, SEP P INT C LUX, P249