ON THE MAXIMUM IN HALL-COEFFICIENT TEMPERATURE-DEPENDENCE IN MEDIUM-DOPED N-GAAS

被引：2
作者：
GERMANOVA, K
DONCHEV, V
VALCHEV, V
HARDALOV, C
YANCHEV, I
机构：
[1] Faculty of Physics, Sofia University, Sofia, BG-1126
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1990年 / 50卷 / 04期
关键词：
71.55-i; 72.80; Ey;
D O I：
10.1007/BF00323593
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Hall coefficient and conductivity are measured in a wide temperature interval from 14.5 to 295 K in order to characterize n-type GaAs bulk monocrystals with moderate donor concentration 1017-1018 cm-3. The weak temperature dependence of the Hall coefficient, showing a slight maximum at 120 K, is analyzed for the first time in terms of the model developed by Klotynsh and Bariss of discrete local levels degenerate with the continuum. For that purpose the presence of a discrete donor level degenerate with the conduction band is supposed and its energy position is calculated using the model. The concentration and the degeneracy factor of this level are determined by fitting the theoretical temperature dependence of the free electron concentration to the experimental one, the former being calculated using the charge neutrality equation. In addition, a qualitative interpretation of the Hall mobility temperature dependence is given. © 1990 Springer-Verlag.
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页码：369 / 372
页数：4
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