TE DOPING STUDY IN MOLECULAR-BEAM EPITAXIAL-GROWTH OF GASB USING SB2TE3

被引：27

作者：

CHIU, TH ^{[1
]}

DITZENBERGER, JA ^{[1
]}

LUFTMAN, HS ^{[1
]}

TSANG, WT ^{[1
]}

HA, NT ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 17期

关键词：

D O I：

10.1063/1.103118

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Te evaporated from a Sb2Te3 compound source has been used to dope GaSb grown by molecular beam epitaxy. Te concentrations up to 2×1019 cm-3 followed a simple Arrhenius behavior with respect to source temperature. Efficient incorporation of Te remained insensitive to growth temperature until above 540 °C. Carrier density was found very close to Te doping level up to about 2×1018 cm -3. Above that, electron mobility as well as crystallinity deteriorated with increasing Te concentration. A dependence of surface reconstruction on Te doping level was observed. A complete change from (1×3) to (2×1) pattern occurred when Te concentration considerably exceeded its solubility limit in GaSb.

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页码：1688 / 1690

页数：3

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