SI-NL10 - PARAMAGNETIC ACCEPTOR STATE OF THE SILICON THERMAL DONOR

被引：18

作者：

BEKMAN, HHPT ^{[1
]}

GREGORKIEWICZ, T ^{[1
]}

AMMERLAAN, CAJ ^{[1
]}

机构：

[1] POLISH ACAD SCI,INST PHYS,WARSAW 42,POLAND

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 61卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.61.227

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：227 / 230

页数：4

共 11 条

[1] ELECTRON-PARAMAGNETIC-RESONANCE STUDY OF HEAT-TREATMENT CENTERS IN N-TYPE SILICON [J].

BEKMAN, HHPT ;

GREGORKIEWICZ, T ;

VANWEZEP, DA ;

AMMERLAAN, CAJ .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4404-4405

[2]

Bourret A., 1985, Thirteenth International Conference on Defects in Semiconductors, P129

[3] OXYGEN INCORPORATION IN THERMAL-DONOR CENTERS IN SILICON [J].

GREGORKIEWICZ, T ;

VANWEZEP, DA ;

BEKMAN, HHPT ;

AMMERLAAN, CAJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (15) :1702-1705

[4] ELECTRON-PARAMAGNETIC-RES STUDIES OF HEAT-TREATMENT CENTERS IN P-TYPE SILICON [J].

GREGORKIEWICZ, T ;

VANWEZEP, DA ;

BEKMAN, HHPT ;

AMMERLAAN, CAJ .

PHYSICAL REVIEW B, 1987, 35 (08) :3810-3817

[5]

GREGORKIEWICZ T, IN PRESS PHYS REV B

[6]

Lee K. M., 1985, MICROSCOPIC IDENTIFI, V46, P263

[7] EPR-SPECTRA OF HEAT-TREATMENT CENTERS IN OXYGEN-RICH SILICON [J].

MULLER, SH ;

SPRENGER, M ;

SIEVERTS, EG ;

AMMERLAAN, CAJ .

SOLID STATE COMMUNICATIONS, 1978, 25 (12) :987-990

[8]

MULLER SH, 1979, I PHYS C SER, V46, P297

[9]

PAJOT B, 1979, IOP C P, V46, P685

[10] ENERGY LEVELS IN ELECTRON-BOMBARDED SILICON [J].

WERTHEIM, GK .

PHYSICAL REVIEW, 1957, 105 (06) :1730-1735

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