CARBON INCORPORATION MECHANISM IN ATOMIC LAYER EPITAXY OF GAAS AND ALGAAS

被引：8

作者：

KOBAYASHI, N

MAKIMOTO, T

机构：

[1] NTT Basic Research Laboratories, Atsugi-shi, Kanagawa

来源：

APPLIED SURFACE SCIENCE | 1994年 / 82-3卷

关键词：

D O I：

10.1016/0169-4332(94)90229-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH2 bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH3 radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH3 groups.

引用

页码：284 / 289

页数：6

共 6 条

[1]

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (12A) :5479-5486

[6] SPECTRAL OBSERVATION OF AS-STABILIZED GAAS-SURFACES IN METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING SURFACE PHOTOABSORPTION [J].

YAMAUCHI, Y ;

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KOBAYASHI, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (08) :3363-3369

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