SINKS FOR RADIATION-INDUCED VACANCIES AND INTERSTITIAL ATOMS IN AS-GROWN SILICON-CRYSTALS

The experimental dependences of the rates of inducing A and E centers on the dopant concentration are compared with the result of the solution of a system of equations that take into account the loss of vacancies to complex formation and to sinks. It is concluded that the concept of sinks for primary vacancies and interstitial atoms does not explain the well-known discrepancy between the number of Frenkel pairs accumulated in the impurity-defect complexes of a crystal and those calculated theoretically on the assumption that a sharp defect-formation threshold exists. (C) 1995 American Institute of Physics.