RESONANT-TUNNELING IN THE QUANTUM HYDRODYNAMIC MODEL

被引：22
作者：
GARDNER, CL [1 ]
机构：
[1] DUKE UNIV,DEPT MATH,DURHAM,NC 27708
来源：
VLSI DESIGN | 1995年 / 3卷 / 02期
关键词：
QUANTUM HYDRODYNAMIC MODEL; RESONANT TUNNELING DIODE;
D O I：
10.1155/1995/54301
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The phenomenon of resonant tunneling is simulated and analyzed in the quantum hydrodynamic (QHD) model for semiconductor devices. Simulations of a parabolic well resonant tunneling diode at 77 K are presented which show multiple regions of negative differential resistance (NDR) in the current-voltage curve. These are the first simulations of the QHD equations to show multiple regions of NDR. Resonant tunneling (and NDR) depend on the quantum interference of electron wavefunctions and therefore on the phases of the wavefunctions. An analysis of the QHD equations using a moment expansion of the Wigner-Boltzmann equation indicates how phase information is retained in the hydrodynamic equations.
引用
收藏
页码：201 / 210
页数：10
相关论文
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