BORON-NITRIDE FILMS PREPARED BY REMOTE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION FROM BORAZINE (B3N3H6)

被引：33

作者：

SMIRNOVA, TP

JAKOVKINA, LV

JASHKIN, IL

SYSOEVA, NP

AMOSOV, JI

机构：

[1] Institute of Inorganic Chemistry, Siberian Department, Russian Academy of Science, 630090 Novosibirsk

来源：

THIN SOLID FILMS | 1994年 / 237卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(94)90235-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The quality of boron nitride thin films prepared by remote plasma-enhanced chemical vapour deposition, using borazine as a precursor substance, have been analysed based on IR spectra. The process for the film deposition consists of a noble gas or nitrogen excitation in an r.f. plasma; transport of the excited gas out of the plasma region; mixing of it with the neutral molecules of borazine out of the plasma region to form precursor species; and a reaction at a heated substrate to form the films. It was shown that the use of different r.f excited gases leads to qualitatively different local bonding in the deposited films. An empirical equation to describe the growth velocity of a film was obtained.

引用

页码：32 / 37

页数：6

共 7 条

[1] CHARACTERIZATION OF FILMS FORMED BY PYROLYSIS OF BORAZINE [J].