BORON ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION

被引：5

作者：

ANGELUCCI, R ^{[1
]}

SOLMI, S ^{[1
]}

ARMIGLIATO, A ^{[1
]}

GUERRI, S ^{[1
]}

MERLI, M ^{[1
]}

POGGI, A ^{[1
]}

CANTERI, R ^{[1
]}

机构：

[1] IST RICERA SCI & TECHNOL,DIV SCI MAT,I-38100 TRENT,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.348457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum silicide is investigated because of its possible application in a self-aligned process for ultra large scale integration technology. p+/n shallow junctions are fabricated by boron implantation through Mo films or MoSi2 layers and rapid thermal annealing. Both procedures enable us to obtain junctions as shallow as 130 nm with very good electrical characteristics (reverse current density 1 nA/cm2 at - 1 V, ideality factor 1.05 and contact resistivity 1 X 10(-6) OMEGA cm2). The influence of a surface preamorphization with different thicknesses on junction depth and electrical characteristics is reported.

引用

页码：3962 / 3967

页数：6

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