BORON ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION

被引：5

作者：

ANGELUCCI, R ^{[1
]}

SOLMI, S ^{[1
]}

ARMIGLIATO, A ^{[1
]}

GUERRI, S ^{[1
]}

MERLI, M ^{[1
]}

POGGI, A ^{[1
]}

CANTERI, R ^{[1
]}

机构：

[1] IST RICERA SCI & TECHNOL,DIV SCI MAT,I-38100 TRENT,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.348457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum silicide is investigated because of its possible application in a self-aligned process for ultra large scale integration technology. p+/n shallow junctions are fabricated by boron implantation through Mo films or MoSi2 layers and rapid thermal annealing. Both procedures enable us to obtain junctions as shallow as 130 nm with very good electrical characteristics (reverse current density 1 nA/cm2 at - 1 V, ideality factor 1.05 and contact resistivity 1 X 10(-6) OMEGA cm2). The influence of a surface preamorphization with different thicknesses on junction depth and electrical characteristics is reported.

引用

页码：3962 / 3967

页数：6

共 50 条

[31] Shallow junction formation by polyatomic cluster ion implantation
Takeuchi, D
Shimada, N
Matsuo, J
Yamada, I
ION IMPLANTATION TECHNOLOGY - 96, 1997, : 772 - 775
[32] Shallow junction formation by decaborane molecular ion implantation
Foad, MA
Webb, R
Smith, R
Matsuo, J
Al-Bayati, A
T-Sheng-Wang
Cullis, T
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (01): : 445 - 449
[33] Shallow junction formation by polyatomic cluster ion implantation
Takeuchi, D
Shimada, N
Matsuo, J
Yamada, I
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 121 (1-4): : 345 - 348
[34] Ultra shallow junction formation by cluster ion implantation
Matsuo, J
Aoki, T
Goto, K
Sugii, T
Yamada, I
SILICON FRONT-END TECHNOLOGY-MATERIALS PROCESSING AND MODELLING, 1998, 532 : 17 - 22
[35] Shallow junction formation by plasma immersion ion implantation
Shao, JQ
Jones, EC
Cheung, NW
SURFACE & COATINGS TECHNOLOGY, 1997, 93 (2-3): : 254 - 257
[36] MO-SILICIDED AND TI-SILICIDED LOW-RESISTANCE SHALLOW JUNCTIONS FORMED USING THE ION-IMPLANTATION THROUGH METAL TECHNIQUE
NAGASAWA, E
OKABAYASHI, H
MORIMOTO, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (03) : 581 - 586
[37] ARSENIC ION-IMPLANTATION IN CVD TUNGSTEN SILICIDE
HARA, T
SUZUKI, H
TAKAHASHI, H
CHEN, SC
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (06) : C195 - C195
[38] ION-IMPLANTATION IN TUNGSTEN LAYERS
HARA, T
CHEN, SC
ANDO, H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (12) : 3139 - 3142
[39] FORMATION OF BURIED OXYNITRIDE LAYERS IN SILICA GLASS BY ION-IMPLANTATION
OYOSHI, K
TAGAMI, T
TANAKA, S
JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : 3653 - 3660
[40] ION-IMPLANTATION AND ANNEALING OF FE FOR SEMIINSULATING LAYERS FORMATION IN INP
GASPAROTTO, A
CARNERA, A
ARZENTON, G
TROMBY, M
PELLEGRINO, S
VIDIMARI, F
CALDIRONI, M
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 773 - 776

← 1 2 3 4 5 →