BORON ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION

被引：5

作者：

ANGELUCCI, R ^{[1
]}

SOLMI, S ^{[1
]}

ARMIGLIATO, A ^{[1
]}

GUERRI, S ^{[1
]}

MERLI, M ^{[1
]}

POGGI, A ^{[1
]}

CANTERI, R ^{[1
]}

机构：

[1] IST RICERA SCI & TECHNOL,DIV SCI MAT,I-38100 TRENT,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.348457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum silicide is investigated because of its possible application in a self-aligned process for ultra large scale integration technology. p+/n shallow junctions are fabricated by boron implantation through Mo films or MoSi2 layers and rapid thermal annealing. Both procedures enable us to obtain junctions as shallow as 130 nm with very good electrical characteristics (reverse current density 1 nA/cm2 at - 1 V, ideality factor 1.05 and contact resistivity 1 X 10(-6) OMEGA cm2). The influence of a surface preamorphization with different thicknesses on junction depth and electrical characteristics is reported.

引用

页码：3962 / 3967

页数：6

共 50 条

[21] DIFFUSION OF BORON IN MO SILICIDE FILMS
KATO, J
FUJISAWA, A
ASAHINA, M
SHIMURA, H
YAMAMOTO, Y
JOURNAL OF APPLIED PHYSICS, 1986, 59 (12) : 4186 - 4189
[22] Cluster ion implantation for shallow junction formation
Matsuo, J
Takeuchi, D
Aoki, T
Yamada, I
ION IMPLANTATION TECHNOLOGY - 96, 1997, : 768 - 771
[23] Ion-implantation issues in the formation of shallow junctions in germanium
Simoen, E.
Satta, A.
D'Amore, A.
Janssens, T.
Clarysse, T.
Martens, K.
De Jaeger, B.
Benedetti, A.
Hoflijk, I.
Brijs, B.
Meuris, M.
Vandervorst, W.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 634 - 639
[24] THE EFFECT OF ION-IMPLANTATION DAMAGE ON DOPANT DIFFUSION IN SILICON DURING SHALLOW-JUNCTION FORMATION
KIM, Y
MASSOUD, HZ
FAIR, RB
JOURNAL OF ELECTRONIC MATERIALS, 1989, 18 (02) : 143 - 150
[25] FORMATION OF BN BY NITROGEN ION-IMPLANTATION OF BORON DEPOSITS
GUZMAN, L
MARCHETTI, F
CALLIARI, L
SCOTONI, I
FERRARI, F
THIN SOLID FILMS, 1984, 117 (01) : L63 - L66
[26] FORMATION OF THIN BURIED OXIDE LAYERS BY ION-IMPLANTATION
WHITE, AE
SHORT, KT
PFEIFFER, LN
WEST, KW
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (03) : C121 - C121
[27] FORMATION OF PHOSPHOSILICATE GLASS LAYERS IN GLASSES BY ION-IMPLANTATION
OYOSHI, K
TAGAMI, T
YAMASHITA, K
TANAKA, S
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 : 1324 - 1327
[28] MODELING OF THE FORMATION OF BURIED DIELECTRIC LAYERS BY ION-IMPLANTATION
JAGER, HU
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 65 (1-4): : 67 - 72
[29] ION-IMPLANTATION OF BORON IN GERMANIUM
JONES, KS
HALLER, EE
JOURNAL OF APPLIED PHYSICS, 1987, 61 (07) : 2469 - 2477
[30] The Effect of Ni Inter layers on Compaction of Mo/Mo Silicide Composites
Sencekova, Lucia
Izdinsky, Karol
Simancik, Frantisek
Stefanik, Pavol
Svec, Pavol
METALLOGRAPHY XV, 2014, 782 : 507 - +

← 1 2 3 4 5 →