BORON ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION

被引：5

作者：

ANGELUCCI, R ^{[1
]}

SOLMI, S ^{[1
]}

ARMIGLIATO, A ^{[1
]}

GUERRI, S ^{[1
]}

MERLI, M ^{[1
]}

POGGI, A ^{[1
]}

CANTERI, R ^{[1
]}

机构：

[1] IST RICERA SCI & TECHNOL,DIV SCI MAT,I-38100 TRENT,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1991年 / 69卷 / 07期

关键词：

D O I：

10.1063/1.348457

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molybdenum silicide is investigated because of its possible application in a self-aligned process for ultra large scale integration technology. p+/n shallow junctions are fabricated by boron implantation through Mo films or MoSi2 layers and rapid thermal annealing. Both procedures enable us to obtain junctions as shallow as 130 nm with very good electrical characteristics (reverse current density 1 nA/cm2 at - 1 V, ideality factor 1.05 and contact resistivity 1 X 10(-6) OMEGA cm2). The influence of a surface preamorphization with different thicknesses on junction depth and electrical characteristics is reported.

引用

页码：3962 / 3967

页数：6

共 50 条

[1] ARSENIC ION-IMPLANTATION THROUGH MO AND MO SILICIDE LAYERS FOR SHALLOW JUNCTION FORMATION
ANGELUCCI, R
SOLMI, S
ARMIGLIATO, A
GABILLI, E
GOVONI, D
MERLI, M
POGGI, A
SOLID-STATE ELECTRONICS, 1992, 35 (07) : 941 - 947
[2] SILICIDED SHALLOW JUNCTION FORMATION BY ION-IMPLANTATION OF IMPURITY IONS INTO SILICIDE LAYERS AND SUBSEQUENT DRIVE-IN
KWONG, DL
KU, YH
LEE, SK
LOUIS, E
ALVI, NS
CHU, P
JOURNAL OF APPLIED PHYSICS, 1987, 61 (11) : 5084 - 5088
[3] RUTHERFORD BACKSCATTERING ANALYSIS OF SILICIDE FORMATION IN MO-SI STRUCTURES BY ION-IMPLANTATION
INADA, T
KISHI, K
MIYAGI, S
KAKINUMA, H
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3): : 567 - 572
[4] SHALLOW JUNCTION FORMATION WITH BORON FLUORIDE AND LOW-ENERGY BORON ION-IMPLANTATION INTO SILICON
LU, ZH
ZHANG, CM
LI, SJ
LUO, Y
ZHANG, HX
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 43 (01): : 46 - 49
[5] DEFECT REDUCTION BY MEV ION-IMPLANTATION FOR SHALLOW JUNCTION FORMATION
SAITO, S
KUMAGAI, M
KONDO, T
APPLIED PHYSICS LETTERS, 1993, 63 (02) : 197 - 199
[6] ION-IMPLANTATION TECHNIQUE FOR SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT
TSAUR, BY
ANDERSON, CH
THIN SOLID FILMS, 1983, 104 (3-4) : 383 - 389
[7] SIMULTANEOUS FORMATION OF A SHALLOW SILICON P-N-JUNCTION AND A SHALLOW SILICIDE SILICON OHMIC CONTACT BY AN ION-IMPLANTATION TECHNIQUE
TSAUR, BY
ANDERSON, CH
APPLIED PHYSICS LETTERS, 1982, 41 (09) : 877 - 879
[8] ON THE ROLE OF ION-IMPLANTATION DAMAGE IN SILICON ON DOPANT DIFFUSION FOR SHALLOW JUNCTION FORMATION
KIM, Y
FAIR, RB
MASSOUD, HZ
JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S26 - S26
[9] TEM CHARACTERIZATION OF YTTRIUM SILICIDE LAYERS SYNTHESIZED BY ION-IMPLANTATION
THEODORE, ND
ALFORD, TL
BARBOUR, JC
CARTER, CB
MAYER, JW
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1992, 54 (06): : 527 - 532
[10] FABRICATION OF HIGH-QUALITY SILICIDE LAYERS BY ION-IMPLANTATION
REESON, KJ
DEVEIRMAN, A
GWILLIAM, R
JEYNES, C
SEALY, BJ
LANDUYT, J
BUSSMANN, U
LINDNER, JKN
TEKAAT, EH
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 217 - 222

← 1 2 3 4 5 →