EVIDENCE FOR A NEGATIVE ELECTRON-ELECTRON CORRELATION-ENERGY IN THE DOMINANT DEEP TRAPPING CENTER IN SILICON-NITRIDE FILMS

被引：49
作者：
CURRY, SE
LENAHAN, PM
KRICK, DT
KANICKI, J
KIRK, CT
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
[2] MIT,LINCOLN LABS,CAMBRIDGE,MA 02139
来源：
APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 14期
关键词：
D O I：
10.1063/1.102514
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report results of electron spin resonance and capacitance versus voltage measurements of silicon nitride/silicon dioxide/silicon devices subjected to high electric field carrier injection into the nitride and (in some samples) ultraviolet illumination. Our results strongly indicate that the dominant trapping center in these silicon nitride films has a negative electron-electron correlation energy.
引用
收藏
页码：1359 / 1361
页数：3
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