ORIENTED CRYSTAL-GROWTH OF SI ON SIO2 PATTERNS BY PULSE RUBY-LASER ANNEALING

被引：26
作者：
TAMURA, M
TAMURA, H
MIYAO, M
TOKUYAMA, T
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 01期
关键词：
D O I：
10.7567/JJAPS.20S1.43
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：43 / 48
页数：6
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