NEW LUMINESCENCE LINE DUE TO NITROGEN IMPLANTED INTO ALXGA1-XAS(X=0.37)

被引：14

作者：

GONDA, S

MAKITA, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1975年 / 27卷 / 07期

关键词：

D O I：

10.1063/1.88505

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：392 / 394

页数：3

共 7 条

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[4] FUNDAMENTAL ABSORPTION EDGE OF AIAS AND AIP [J].

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[5] ANNEALING TEMPERATURE-DEPENDENCE OF PHOTOLUMINESCENCE IN N-IMPLANTED GAAS1-XPX (X = 0.36) [J].

MAKITA, Y ;

GONDA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (03) :565-566

[6]

ONTON A, 1971, B AM PHYS SOC, V16, P371

[7] PHOTOLUMINESCENCE OF ALXGA1-XAS [J].

SHAH, J ;

DIGIOVANNI, AE ;

MILLER, BI .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (08) :3436-+

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