FILM PROPERTIES OF MOSI2 AND THEIR APPLICATION TO SELF-ALIGNED MOSI2 GATE MOSFET

被引：6

作者：

MOCHIZUKI, T

TSUJIMARU, T

KASHIWAGI, M

NISHI, Y

机构：

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1980年 / 15卷 / 04期

关键词：

D O I：

10.1109/JSSC.1980.1051428

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：496 / 500

页数：5

共 12 条

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[7] NEW MOS PROCESS USING MOSI2 AS A GATE MATERIAL [J].

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MOCHIZUKI T, UNPUBLISHED

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