LUMINESCENCE OF ALXGA1-XAS GROWN BY MOVPE

被引：28
|
作者：
ANDRE, JP
BOULOU, M
MICREAROUSSEL, A
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1981年 / 55卷 / 01期
关键词：
D O I：
10.1016/0022-0248(81)90287-6
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：192 / 197
页数：6
相关论文
共 50 条
  • [1] Investigations on AlxGa1-xAs Solar Cells Grown by MOVPE
    Heckelmann, Stefan
    Lackner, David
    Karcher, Christian
    Dimroth, Frank
    Bett, Andreas W.
    IEEE JOURNAL OF PHOTOVOLTAICS, 2015, 5 (01): : 446 - 453
  • [2] THE MOVPE GROWTH OF ALXGA1-XAS
    RAUBENHEIMER, D
    LEITCH, AWR
    VERMAAK, JS
    SOUTH AFRICAN JOURNAL OF SCIENCE, 1991, 87 (07) : 322 - 326
  • [3] Optical properties of MOVPE grown AlxGa1-xAs quantum wells
    Roberts, JS
    David, JPR
    Chen, YH
    Sale, TE
    JOURNAL OF CRYSTAL GROWTH, 1997, 170 (1-4) : 621 - 625
  • [4] Photoreflectance investigation of δ-doped MOVPE-grown AlxGa1-xAs layers
    Nowaczyk-Utko, M
    Sek, G
    Misiewicz, J
    Sciana, B
    Radziewicz, D
    Tlaczala, M
    INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS 2000: EPILAYERS AND HETEROSTRUCTURES IN OPTOELECTRONICS AND SEMICONDUCTOR TECHNOLOGY, 2001, 4413 : 254 - 257
  • [5] INCREASE IN LUMINESCENCE EFFICIENCY OF ALXGA1-XAS GROWN BY ORGANOMETALLIC VPE
    STRINGFELLOW, GB
    HOM, G
    APPLIED PHYSICS LETTERS, 1979, 34 (11) : 794 - 796
  • [6] GROWTH-PROPERTIES OF ALXGA1-XAS GROWN BY MOVPE USING TEG AND TMA
    SHINOHARA, M
    IMAMURA, Y
    YANAGAWA, F
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (09): : L1459 - L1461
  • [7] LUMINESCENCE IN INDIRECT BANDGAP ALXGA1-XAS
    KRESSEL, H
    NICOLL, FH
    HAWRYLO, FZ
    LOCKWOOD, HF
    JOURNAL OF APPLIED PHYSICS, 1970, 41 (11) : 4692 - &
  • [8] Impurity incorporation of unintentionally doped AlxGa1-xAs during MOVPE
    Fujii, K
    Kawamura, K
    Gotoh, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 221 (1-4) : 41 - 46
  • [9] HALL ANALYSIS OF THE ELECTRICAL-PROPERTIES OF N-TYPE ALXGA1-XAS GROWN BY MOVPE
    LEITCH, AWR
    RAUBENHEIMER, D
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (12) : 1429 - 1432
  • [10] GROWTH OF ALXGA1-XAS BY MOVPE USING ALTERNATIVE ALKYLALUMINUM PRECURSORS
    JONES, AC
    WRIGHT, PJ
    OLIVER, PE
    COCKAYNE, B
    ROBERTS, JS
    JOURNAL OF CRYSTAL GROWTH, 1990, 100 (03) : 395 - 404
12345