GROWTH OF RHGA ON GAAS (001) IN A MOLECULAR-BEAM EPITAXY SYSTEM

被引：30
作者：
GUIVARCH, A
SECOUE, M
GUENAIS, B
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 12期
关键词：
D O I：
10.1063/1.99237
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：948 / 950
页数：3
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