THE INTERACTION OF H-2 WITH GAAS (100) SURFACES - A MODEL STUDY OF MOVPE SUBSTRATE PREPARATION

被引：16

作者：

BUHAENKO, DS

FRANCIS, SM

GOULDING, PA

PEMBLE, ME

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 3-4期

关键词：

D O I：

10.1016/0022-0248(89)90558-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：591 / 594

页数：4

共 15 条

[1] THE EFFECT OF HYDROGEN CHEMISORPTION ON GAAS(100) AND GAAS(1BAR1BAR1BAR) [J].

BRINGANS, RD ;

BACHRACH, RZ .

SOLID STATE COMMUNICATIONS, 1983, 45 (02) :83-86

[2] SURFACE SCIENCE STUDIES OF SEMICONDUCTOR GROWTH-PROCESSES [J].

BUHAENKO, DS ;

FRANCIS, SM ;

GOULDING, PA ;

PEMBLE, ME .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (06) :1688-1693

[3] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].

DRATHEN, P ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1978, 77 (01) :L162-L166

[4]

ERTL G, 1974, LOW ENERGY ELECTRONS

[5]

HEINECKE H, 1984, J ELECTRON MATER, V13, P815, DOI 10.1007/BF02657928

[6] VIBRATIONAL-SPECTRA OF HYDROGEN-ATOMS ADSORBED ON MBE-GROWN GAAS(100) [J].

JOSEPH, DM ;

HICKS, RF ;

SADWICK, LP ;

WANG, KL .

SURFACE SCIENCE, 1988, 204 (1-2) :L721-L724

[7] HYDROGEN ADSORPTION ON GAAS(110) STUDIED BY TEMPERATURE-PROGRAMMED DESORPTION [J].

MOKWA, W ;

KOHL, D ;

HEILAND, G .

PHYSICAL REVIEW B, 1984, 29 (12) :6709-6715

[8]

Moss S.J., 1987, CHEM SEMICONDUCTOR I

[9]

PEMBLE ME, 1989, JUN P NATO WORKSH ST

[10] COMPOSITION, STRUCTURE, SURFACE-STATES, AND O-2 STICKING COEFFICIENT FOR DIFFERENTLY PREPARED GAAS(111)AS SURFACES [J].

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1977, 63 (01) :33-44

← 1 2 →