PULSED LASER-INDUCED TRANSIENT THERMOELECTRIC EFFECTS IN SILICON-CRYSTALS

被引：64

作者：

SASAKI, M

NEGISHI, H

INOUE, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 03期

关键词：

D O I：

10.1063/1.336600

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：796 / 802

页数：7

共 30 条

[1]

Adler R.B., 1964, INTRO SEMICONDUCTOR

[2] LOW-TEMPERATURE IMPURITY CONDUCTION IN N-TYPE SILICON [J].

ATKINS, KR ;

DONOVAN, R ;

WALMSLEY, RH .

PHYSICAL REVIEW, 1960, 118 (02) :411-414

[3] MEASUREMENT OF SURFACE RECOMBINATION VELOCITY IN SILICON BY STEADY-STATE PHOTOCONDUCTANCE [J].

BATH, HM ;

CUTLER, M .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (03) :171-179

[4]

BEBB HB, 1972, SEMICONDUCTORS SEMIM, V8, P210

[5] RECOMBINATION PROPERTIES OF GOLD IN SILICON [J].

BEMSKI, G .

PHYSICAL REVIEW, 1958, 111 (06) :1515-1518

[6] LIFETIME IN PULLED SILICON CRYSTALS [J].

BITTMANN, CA ;

BEMSKI, G .

JOURNAL OF APPLIED PHYSICS, 1957, 28 (12) :1423-1426

[7]

CRANK J, 1967, MATH DIFFUSION

[8]

Dember H, 1931, PHYS Z, V32, P554

[9]

DEMBER H, 1931, PHYS Z, V33, P207

[10] SPECTRAL DISTRIBUTION OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS - THEORY [J].

GARTNER, W .

PHYSICAL REVIEW, 1957, 105 (03) :823-829

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