PHOTOELECTROCHEMICAL BEHAVIOR OF THE GAAS/ALXGA1-XAS SUPERLATTICE ELECTRODE/ELECTROLYTE INTERFACE

被引：1
|
作者：
LIU, Y [1 ]
XIAO, XR [1 ]
LI, XP [1 ]
REN, XM [1 ]
ZHENG, HQ [1 ]
ZENG, YP [1 ]
YAN, CH [1 ]
SUN, DZ [1 ]
机构：
[1] ACAD SINICA,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA
来源：
CHINESE PHYSICS LETTERS | 1994年 / 11卷 / 04期
关键词：
D O I：
10.1088/0256-307X/11/4/013
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Single and multiple quantum wells of lattice-matched superlattices material GaAs/AlxGa1-xAs have been studied as photoelectrodes in photoelectrochemical cells containing nonaqueous electrolyte. Structural photocurrent spectra in the potential range of -1.8 to 1.0 V (vs standard calomel electrode) were obtained. The quantum yields for both superlattice electrodes were estimated and compared.
引用
收藏
页码：239 / 241
页数：3
相关论文
共 50 条
  • [1] ELECTRONIC SUBBANDS FOR ALXGA1-XAS/GAAS MULTILAYER AND SUPERLATTICE STRUCTURES
    RUDEN, PP
    ENGELHARDT, DC
    ABROKWAH, JK
    JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) : 294 - 298
  • [2] ANGULAR DEPENDENT MAGNETORESISTANCE OSCILLATION IN GAAS ALXGA1-XAS SUPERLATTICE
    YAGI, R
    IYE, Y
    HASHIMOTO, Y
    ODAGIRI, T
    NOGUCHI, H
    SAKAKI, H
    IKOMA, T
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1991, 60 (11) : 3784 - 3791
  • [3] EXCITON STARK AND LANDAU LADDERS IN A GAAS/ALXGA1-XAS SUPERLATTICE
    BARTICEVIC, Z
    PACHECHO, M
    CLARO, F
    PHYSICAL REVIEW B, 1995, 51 (20): : 14414 - 14420
  • [4] Optical properties of AlxGa1-xAs/GaAs superlattice solar cells
    Kuramoto, Makoto
    Urabe, Hiroyuki
    Nakano, Tomohiro
    Kawaharazuka, Atsushi
    Nishinaga, Jiro
    Makimoto, Toshiki
    Horikoshi, Yoshiji
    JOURNAL OF CRYSTAL GROWTH, 2015, 425 : 333 - 336
  • [5] INVESTIGATION OF MOCVD GROWTH OF ALXGA1-XAS/GAAS AND ALXGA1-XAS/GAAS/ALXGA1-XAS/GAAS MULTILAYER STRUCTURES WITH HIGH AL CONTENT
    GAO, HK
    YUN, F
    ZHANG, JK
    HOU, X
    GONG, P
    JOURNAL OF CRYSTAL GROWTH, 1991, 107 (1-4) : 428 - 433
  • [6] HRTEM of interface between GaAs and AlxGa1-xAs semiconductors
    Xu, HF
    ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2, 1998, : 475 - 476
  • [7] DONOR IMPACT IONIZATION AND ELECTRON HEATING IN A GAAS/ALXGA1-XAS SUPERLATTICE
    SNOW, ES
    CAMPBELL, PM
    GAMMON, D
    SUPERLATTICES AND MICROSTRUCTURES, 1990, 8 (02) : 215 - 220
  • [8] Thick AlxGa1-xAs in GaAs/AlxGa1-xAs quantum wells: A leaky barrier
    Kim, DS
    Ko, HS
    Kim, YM
    Rhee, SJ
    Hong, SC
    Yee, DS
    Woo, JC
    Choi, HJ
    Ihm, J
    17TH CONGRESS OF THE INTERNATIONAL COMMISSION FOR OPTICS: OPTICS FOR SCIENCE AND NEW TECHNOLOGY, PTS 1 AND 2, 1996, 2778 : 729 - 730
  • [9] Photoelectrochemical Behavior of the Lattice-matched Single Quantum Well GaAs/AlxGa1-xAs Electrodes
    刘尧
    肖绪瑞
    李学萍
    阎春辉
    曾一平
    孙殿照
    郑海群
    国红熙
    ChineseScienceBulletin, 1994, (21) : 1795 - 1800
  • [10] Interface phonons in cylindrical GaAs/AlxGa1-xAs quantum dots
    Chen, CY
    Li, WS
    Yeung, HK
    SOLID STATE COMMUNICATIONS, 1998, 106 (06) : 341 - 345
12345