STRAIN AT SI-SIO2 INTERFACES STUDIED BY MICRO-RAMAN SPECTROSCOPY

被引:38
作者
BRUNNER, K [1 ]
ABSTREITER, G [1 ]
KOLBESEN, BO [1 ]
MEUL, HW [1 ]
机构
[1] SIEMENS AG,FORSCHUNGSLAB,D-8000 MUNICH 83,FED REP GER
关键词
D O I
10.1016/0169-4332(89)90424-8
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:116 / 126
页数:11
相关论文
共 19 条
[1]   EFFECT OF STATIC UNIAXIAL STRESS ON RAMAN SPECTRUM OF SILICON [J].
ANASTASSAKIS, E ;
PINCZUK, A ;
BURSTEIN, E ;
POLLAK, FH ;
CARDONA, M .
SOLID STATE COMMUNICATIONS, 1970, 8 (02) :133-+
[2]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[3]   EFFECT OF FREE CARRIERS ON ZONE-CENTER VIBRATIONAL MODES IN HEAVILY DOPED P-TYPE SI .2. OPTICAL MODES [J].
CERDEIRA, F ;
FJELDLY, TA ;
CARDONA, M .
PHYSICAL REVIEW B, 1973, 8 (10) :4734-4745
[4]   EFFECTS OF INTERBAND EXCITATIONS ON RAMAN PHONONS IN HEAVILY DOPED N-SI [J].
CHANDRASEKHAR, M ;
RENUCCI, JB ;
CARDONA, M .
PHYSICAL REVIEW B, 1978, 17 (04) :1623-1633
[5]   EFFECT OF FREE-CARRIERS ON THE RAMAN FREQUENCY OF ULTRAHEAVILY DOPED N-SI [J].
CONTRERAS, G ;
SOOD, AK ;
CARDONA, M ;
COMPAAN, A .
SOLID STATE COMMUNICATIONS, 1984, 49 (04) :303-305
[6]   CHARACTERISTICS OF A PROPAGATING GAUSSIAN BEAM [J].
DICKSON, LD .
APPLIED OPTICS, 1970, 9 (08) :1854-&
[7]   DETERMINATION OF EXISTING STRESS IN SILICON FILMS ON SAPPHIRE SUBSTRATE USING RAMAN-SPECTROSCOPY [J].
ENGLERT, T ;
ABSTREITER, G ;
PONTCHARRA, J .
SOLID-STATE ELECTRONICS, 1980, 23 (01) :31-33
[8]   A LATTICE THEORY OF MORPHIC EFFECTS IN CRYSTALS OF DIAMOND STRUCTURE [J].
GANESAN, S ;
MARADUDI.AA ;
OITMAA, J .
ANNALS OF PHYSICS, 1970, 56 (02) :556-&
[9]  
Hayes W., 1978, SCATTERING LIGHT CRY
[10]   RAMAN MICROPROBE DETERMINATION OF LOCAL CRYSTAL ORIENTATION [J].
HOPKINS, JB ;
FARROW, LA .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1103-1110