INFLUENCE OF LOCALIZED LATENT DEFECTS ON ELECTRICAL BREAKDOWN OF THIN INSULATORS

被引：26
作者：
OLIVO, P [1 ]
NGUYEN, TN [1 ]
RICCO, B [1 ]
机构：
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1991年 / 38卷 / 03期
关键词：
D O I：
10.1109/16.75162
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electrical breakdown in thin SiO2 films is measured with different techniques at different electric fields. It is shown that oxide reliability is affected by the presence of latent defects requiring a certain time to develop and evolve towards a destructive stage. As such a time is weakly dependent on applied fields, breakdown is not adequately detected by accelerated tests. It is also shown that, due to the localized nature of breakdown, meaningful relationships between measured parameters able to clarify the microscopic nature of oxide failure are not easy to establish.
引用
收藏
页码：527 / 531
页数：5
相关论文
共 19 条
[1]   HOLE TRAPPING AND BREAKDOWN IN THIN SIO2 [J].
CHEN, IC ;
HOLLAND, S ;
HU, CM .
IEEE ELECTRON DEVICE LETTERS, 1986, 7 (03) :164-167
[2]  
CHEN IC, 1985, IEEE T ELECTRON DEV, V32, P413, DOI 10.1109/T-ED.1985.21957
[3]   ACCELERATED TESTING OF TIME-DEPENDENT BREAKDOWN OF SIO2 [J].
CHEN, IC ;
HU, CM .
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (04) :140-142
[4]   SUBSTRATE HOLE CURRENT AND OXIDE BREAKDOWN [J].
CHEN, IC ;
HOLLAND, S ;
YOUNG, KK ;
CHANG, C ;
HU, C .
APPLIED PHYSICS LETTERS, 1986, 49 (11) :669-671
[5]   CURRENT FLUCTUATIONS AND SILICON-OXIDE WEAR-OUT IN METAL-OXIDE-SEMICONDUCTOR TUNNEL-DIODES [J].
FARMER, KR ;
SALETTI, R ;
BUHRMAN, RA .
APPLIED PHYSICS LETTERS, 1988, 52 (20) :1749-1751
[6]   LOCALIZED-STATE INTERACTIONS IN METAL-OXIDE-SEMICONDUCTOR TUNNEL-DIODES [J].
FARMER, KR ;
ROGERS, CT ;
BUHRMAN, RA .
PHYSICAL REVIEW LETTERS, 1987, 58 (21) :2255-2258
[7]  
Grunthaner F. J., 1986, Material Science Reports, V1, P65, DOI 10.1016/S0920-2307(86)80001-9
[8]  
HARARI E, 1978, J APPL PHYS, V49, P2487
[9]   ON PHYSICAL MODELS FOR GATE OXIDE BREAKDOWN [J].
HOLLAND, S ;
CHEN, IC ;
MA, TP ;
HU, C .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :302-305
[10]  
LIONG MS, 1978, APPL PHYS LETT, V50, P104
12