STARK EFFECT ON IMPURITY LEVELS IN DIAMOND

被引:30
作者
ANASTASSAKIS, E
机构
[1] Physics Department, Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia
来源
PHYSICAL REVIEW | 1969年 / 186卷 / 03期
关键词
D O I
10.1103/PhysRev.186.760
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
In this article we present our experimental results on the Stark effect of the shallow impurity levels of p-type semiconducting diamond (IIb). The shift of the levels is found to be quadratic in the applied electric field, and to tend towards the ground state. No splitting of the fourfold degenerate levels was observed; instead, a broadening of the levels, quadratic in the field, is attributed to an unresolved splitting. The over-all behavior of the spectrum agrees with the group-theoretical predictions, and the estimated Stark coefficients are in reasonable relation with those of silicon and germanium. © 1969 The American Physical Society.
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页码:760 / +
页数:1
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共 34 条
[1]  
ANASTASSAKIS E, 1968, THESIS U PENNSYLVANI
[2]  
ANASTASSAKIS E, TO BE PUBLISHED
[3]  
BAGGULEY DM, 1966, J PHYS SOC JPN, VS 21, P244
[4]   SPIN AND COMBINED RESONANCE ON ACCEPTOR CENTRES IN GE AND SI TYPE CRYSTALS .2. EFFECT OF ELECTRICAL FIELD AND RELAXATION TIME [J].
BIR, GL ;
PIKUS, GE ;
BUTIKOV, EI .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (12) :1475-&
[5]   OPTICAL INVESTIGATIONS OF IMPURITY LEVELS IN SILICON [J].
BURSTEIN, E ;
BELL, EE ;
DAVISSON, JW ;
LAX, M .
JOURNAL OF PHYSICAL CHEMISTRY, 1953, 57 (08) :849-852
[6]   ABSORPTION SPECTRA OF IMPURITIES IN SILICON .1. GROUP-III ACCEPTORS [J].
BURSTEIN, E ;
PICUS, G ;
HENVIS, B ;
WALLIS, R .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (1-2) :65-74
[7]   PHOTOTHERMAL IONIZATION AND PHOTON-INDUCED TUNNELING IN ACCEPTOR PHOTOCONDUCTIVITY SPECTRUM OF SEMICONDUCTING DIAMOND [J].
COLLINS, AT ;
LIGHTOWLERS, EC .
PHYSICAL REVIEW, 1968, 171 (03) :843-+
[8]   EXCITATION SPECTRUM OF ALUMINUM ACCEPTORS IN DIAMOND UNDER UNIAXIAL STRESS [J].
CROWTHER, PA ;
DEAN, PJ ;
SHERMAN, WF .
PHYSICAL REVIEW, 1967, 154 (03) :772-&
[9]   INTRINSIC AND EXTRINSIC RECOMBINATION RADIATION FROM NATURAL AND SYNTHETIC ALUMINUM-DOPED DIAMOND [J].
DEAN, PJ ;
LIGHTOWLERS, EC ;
WIGHT, DR .
PHYSICAL REVIEW, 1965, 140 (1A) :A352-+
[10]   EXCITATION SPECTRUM OF BORON IN SILICON UNDER UNIAXIAL STRESS [J].
FISHER, P ;
RAMDAS, AK .
PHYSICS LETTERS, 1965, 16 (01) :26-&