HOT-CARRIER-INDUCED DEGRADATION IN PARA-MOSFETS UNDER AC STRESS

被引：6

作者：

ONG, TC ^{[1
]}

SEKI, KC ^{[1
]}

KO, PK ^{[1
]}

HU, CM ^{[1
]}

机构：

[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 05期

关键词：

D O I：

10.1109/55.693

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：211 / 213

页数：3

共 9 条

[1]

CHEN KL, 1986, IEEE T ELECTRON DEV, V33, P424, DOI 10.1109/T-ED.1986.22504

[2] HOT-CARRIER-INDUCED MOSFET DEGRADATION UNDER AC STRESS [J].

CHOI, JY ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (08) :333-335

[3] DYNAMIC CHANNEL HOT-CARRIER DEGRADATION OF NMOS TRANSISTORS BY ENHANCED ELECTRON-HOLE INJECTION INTO THE OXIDE [J].

DOYLE, BS ;

BOURCERIE, M ;

MARCHETAUX, JC ;

BOUDOU, A .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :237-239

[4] A SIMPLE METHOD TO EVALUATE DEVICE LIFETIME DUE TO HOT-CARRIER EFFECT UNDER DYNAMIC STRESS [J].

HORIUCHI, T ;

MIKOSHIBA, H ;

NAKAMURA, K ;

HAMANO, K .

IEEE ELECTRON DEVICE LETTERS, 1986, 7 (06) :337-339

[5]

IGURA I, 1987, 1987 S VLSI TECHN KA, P47

[6]

KUO MM, 1987, IN PRESS IEDM

[7]

TAM S, 1984, IEEE T ELECTRON DEV, V31, P1116

[8] HOT-CARRIER DRIFTS IN SUBMICROMETER P-CHANNEL MOSFETS [J].

WEBER, W ;

LAU, F .

IEEE ELECTRON DEVICE LETTERS, 1987, 8 (05) :208-210

[9] DEGRADATION OF N-MOS-TRANSISTORS AFTER PULSED STRESS [J].

WEBER, W ;

WERNER, C ;

DORDA, G .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) :518-520

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