HOT-CARRIER-INDUCED DEGRADATION IN PARA-MOSFETS UNDER AC STRESS

被引:6
作者
ONG, TC [1 ]
SEKI, KC [1 ]
KO, PK [1 ]
HU, CM [1 ]
机构
[1] HITACHI LTD,CENT RES LAB,KOKUBUNJI,TOKYO 185,JAPAN
关键词
D O I
10.1109/55.693
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:211 / 213
页数:3
相关论文
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