FABRICATION PROCESSES FOR A SILICON SUBSTRATE PACKAGE FOR INTEGRATED GALLIUM-ARSENIDE LASER ARRAYS

被引:5
|
作者
BRADY, MJ
机构
关键词
D O I
10.1149/1.2131263
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:1642 / 1647
页数:6
相关论文
共 50 条
  • [31] CARBON, OXYGEN AND SILICON IMPURITIES IN GALLIUM-ARSENIDE
    BROZEL, MR
    CLEGG, JB
    NEWMAN, RC
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1978, 11 (09) : 1331 - 1339
  • [32] SOLID SOLUBILITY OF AMPHOTERIC SILICON IN GALLIUM-ARSENIDE
    TERAMOTO, I
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (11) : 1817 - 1822
  • [33] GALLIUM-ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS ON SILICON
    FANG, SF
    ADOMI, K
    IYER, S
    MORKOC, H
    ZABEL, H
    CHOI, C
    OTSUKA, N
    JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) : R31 - R58
  • [34] DEFECTS AND DIFFUSION IN SILICON, GERMANIUM, AND GALLIUM-ARSENIDE
    GOESELE, UM
    TAN, TY
    JOURNAL OF METALS, 1987, 39 (07): : A6 - A6
  • [35] PERSPECTIVE OF GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
    LECAN, C
    ACTA ELECTRONICA, 1980, 23 (03): : 191 - 192
  • [36] GALLIUM-ARSENIDE INTEGRATED-CIRCUITS TECHNOLOGIES
    CATHELIN, M
    ACTA ELECTRONICA, 1980, 23 (03): : 193 - 204
  • [37] CAPLESS ANNEALING OF SILICON IMPLANTED GALLIUM-ARSENIDE
    GRANGE, JD
    WICKENDEN, DK
    SOLID-STATE ELECTRONICS, 1983, 26 (04) : 313 - 317
  • [38] ELECTRICAL-ACTIVITY OF SILICON IN GALLIUM-ARSENIDE
    KAMALOV, MN
    KOLESNIK, LI
    MILVIDSKII, MG
    RAKOV, VV
    SHERSHAKOVA, IN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (03): : 340 - 341
  • [39] INTEGRATED-CIRCUITS - THE CASE FOR GALLIUM-ARSENIDE
    EDEN, RC
    LIVINGSTON, AR
    WELCH, BM
    IEEE SPECTRUM, 1983, 20 (12) : 30 - 37
  • [40] THE BREAKTHROUGH OF GALLIUM-ARSENIDE INTEGRATED-CIRCUITS
    KANEL, A
    VIDE-SCIENCE TECHNIQUE ET APPLICATIONS, 1985, 40 (229): : 567 - 571