ANALYSIS OF CONCAVE MOSFET

被引：26

作者：

NATORI, K

SASAKI, I

MASUOKA, F

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 04期

关键词：

D O I：

10.1109/T-ED.1978.19106

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：448 / 456

页数：9

共 10 条

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[6]

Poon H. C., 1973, 1973 International Electron Devices Meeting Technical Digest, P156, DOI 10.1109/IEDM.1973.188673

[7] DEVICE DESIGN CONSIDERATIONS FOR ION-IMPLANTED N-CHANNEL MOSFETS [J].

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[8] VMOS ROM [J].

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[9]

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[10]

YAU LD, 1974, SOLID STATE ELECTRON, V17, P1059, DOI 10.1016/0038-1101(74)90145-2

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