TEMPERATURE-DEPENDENT AND FIELD-DEPENDENT CHARGE RELAXATION IN SIO2 GATE INSULATORS

被引：27
作者：
BOESCH, HE
MCGARRITY, JM
MCLEAN, FB
机构：
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1978年 / 25卷 / 03期
关键词：
D O I：
10.1109/TNS.1978.4329453
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1012 / 1016
页数：5
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