GAN/GAINN/GAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FABRICATED USING PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：48

作者：

SAKAI, H ^{[1
]}

KOIDE, T ^{[1
]}

SUZUKI, H ^{[1
]}

YAMAGUCHI, M ^{[1
]}

YAMASAKI, S ^{[1
]}

KOIKE, M ^{[1
]}

AMANO, H ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD, HARUHI, AICHI 452, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期

关键词：

GAN; GAINN; RF-MBE; DOUBLE HETEROSTRUCTURE; VIOLET LED;

D O I：

10.1143/JJAP.34.L1429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality GaN and Ga1-xInxN (x less than or equal to 0.2) have been grown by RF-plasma-assisted molecular beam epitaxy (RF-MBE) on the GaN/AlN/sapphire substrate grown by metalorganic vapor-phase epitaxy for the first time. GaN and GaInN showed intense near-band-edge photoluminescence (PL) at room temperature. A double heterostructure (DH) of p-GaN:Mg/Ga0.8In0.2N/n-GaN has been fabricated. The DH light emitting diode showed intense violet emission upon current injection at room temperature.

引用

页码：L1429 / L1431

页数：3

共 15 条

[11] FEMTOSECOND GAIN DYNAMICS IN INGAAS/ALGAAS STRAINED-LAYER SINGLE-QUANTUM-WELL DIODE-LASERS [J].