GAN/GAINN/GAN DOUBLE-HETEROSTRUCTURE LIGHT-EMITTING DIODE FABRICATED USING PLASMA-ASSISTED MOLECULAR-BEAM EPITAXY

被引：48

作者：

SAKAI, H ^{[1
]}

KOIDE, T ^{[1
]}

SUZUKI, H ^{[1
]}

YAMAGUCHI, M ^{[1
]}

YAMASAKI, S ^{[1
]}

KOIKE, M ^{[1
]}

AMANO, H ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] TOYODA GOSEI CO LTD, HARUHI, AICHI 452, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 11A期

关键词：

GAN; GAINN; RF-MBE; DOUBLE HETEROSTRUCTURE; VIOLET LED;

D O I：

10.1143/JJAP.34.L1429

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-quality GaN and Ga1-xInxN (x less than or equal to 0.2) have been grown by RF-plasma-assisted molecular beam epitaxy (RF-MBE) on the GaN/AlN/sapphire substrate grown by metalorganic vapor-phase epitaxy for the first time. GaN and GaInN showed intense near-band-edge photoluminescence (PL) at room temperature. A double heterostructure (DH) of p-GaN:Mg/Ga0.8In0.2N/n-GaN has been fabricated. The DH light emitting diode showed intense violet emission upon current injection at room temperature.

引用

收藏

页码：L1429 / L1431

页数：3

相关论文

共 15 条

[1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[2] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[3] HYDROGENATION OF P-TYPE GALLIUM NITRIDE [J].

BRANDT, MS ;

JOHNSON, NM ;

MOLNAR, RJ ;

SINGH, R ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1994, 64 (17) :2264-2266

[4] P-TYPE ZINCBLENDE GAN ON GAAS SUBSTRATES [J].

LIN, ME ;

XUE, G ;

ZHOU, GL ;

GREENE, JE ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1993, 63 (07) :932-933

[5] PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTALLINE GAN [J].

MARUSKA, HP ;

TIETJEN, JJ .

APPLIED PHYSICS LETTERS, 1969, 15 (10) :327-&

[6] BLUE-VIOLET LIGHT-EMITTING GALLIUM NITRIDE P-N-JUNCTIONS GROWN BY ELECTRON-CYCLOTRON RESONANCE-ASSISTED MOLECULAR-BEAM EPITAXY [J].

MOLNAR, RJ ;

SINGH, R ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1995, 66 (03) :268-270

[7]

Moustakas T. D., 1993, Semiconductor Heterostructures for Photonic and Electronic Applications Symposium, P753

[8] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS [J].

NAKAMURA, S ;

IWASA, N ;

SENOH, M ;

MUKAI, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A) :1258-1266

[9] GAN GROWTH USING GAN BUFFER LAYER [J].

NAKAMURA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (10A) :L1705-L1707

[10]

Pankove J. I., 1971, Journal of Luminescence, V4, P63, DOI 10.1016/0022-2313(71)90009-3