NUMERICAL-ANALYSIS OF A CYLINDRICAL THIN-PILLAR TRANSISTOR (CYNTHIA)

被引：56
作者：
MIYANO, S
HIROSE, M
MASUOKA, F
机构：
[1] ULSI Research Center, Toshiba Corporation, Saiwai-ku, Kawasaki, 210, 1, Komukai Toshiba-cho
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1992年 / 39卷 / 08期
关键词：
D O I：
10.1109/16.144678
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The authors have analyzed the characteristics of a cylindrical thin-pillar transistor (CYNTHIA), which is a vertical MOS transistor with a cylindrical gate electrode surrounding a submicrometer-diameter silicon pillar. The device characteristics are calculated by solving Poisson's equation in cylindrical coordinates. Results showed that CYNTHIA has three superior features: excellent subthreshold characteristics, enhanced electron mobility, and increased sheet electron concentration. These superior characteristics result in a feature size twice that of vertical SOI transistors. Our calculation is that CYNTHIA is quite an attractive device design for future ultra-high-density LSI's.
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页码：1876 / 1881
页数：6
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